Search results for " ReRAM"

showing 7 items of 7 documents

Synergistic Use of Electrochemical Impedance Spectroscopy and Photoelectrochemical Measurements for Studying Solid State Properties of Anodic HfO2

2017

Within the past years, intense research has been carried out on HfO2 as high k material, promising candidate to replace SiO2 as gate dielectric in CMOS based devices (1), and as metal oxide for resistive random access memory (ReRAM) (2). For both technological applications compact, uniform and flat oxides are necessary, and a detailed understanding of their physical properties as a function of the fabrication conditions is strongly. Hafnia performance can be significantly influenced by carrier trapping taking place at pre-existing precursors states (induced by oxygen vacancies, interstitial ions, impurities acting as dopants), or by self-trapping in a perfect lattice, where the potential we…

EngineeringSettore ING-IND/23 - Chimica Fisica Applicataanodizing HfO2 CMOS ReRAM Electrochemical Impedance Spectroscopy Photoelectrochemical Measurements Solid State Propertiesbusiness.industrySolid-stateAnodizing Hafnium oxide Nb doped HfO2 Electrochemical Impedance Spectroscopy Photocurrent Spectroscopy Solid State Properties CMOS ReRAMNanotechnologybusinessAnodeDielectric spectroscopy
researchProduct

Custom measurement system for memristor characterisation

2021

Abstract A cheap, compact and customisable characterisation system for memristor devices, working between ± 10 V, is presented. SPICE (Simulation Program with Integrated Circuit Emphasis) simulations are performed to verify the circuit feasibility and a proper software is developed to drive the system. The potentiality of the realised system is tested by performing several electrical measurements on both Cu/HfO2/Pt memristors and two-terminals commercial devices.

010302 applied physicsComputer sciencebusiness.industrySystem of measurementSpiceEmphasis (telecommunications)02 engineering and technologyMemristorIntegrated circuit021001 nanoscience & nanotechnologyCondensed Matter PhysicsSettore ING-INF/01 - Elettronica01 natural sciencesElectronic Optical and Magnetic Materialslaw.inventionSoftwarelaw0103 physical sciencesMaterials ChemistryElectronic engineeringElectrical measurementsElectrical and Electronic EngineeringMemristor ReRAM electrical characterization system current compliance endurance retention0210 nano-technologybusinessSolid-State Electronics
researchProduct

Electrochemically Prepared High-k Thin Films for Resistive Switching Devices

Electrochemical oxidationReRAMSettore ING-IND/23 - Chimica Fisica ApplicataHigh-k materialResistive switchingAnodic oxides; Electrochemical oxidation; High-k materials; Resistive switching; ReRAMAnodic oxide
researchProduct

Solid State Properties of Anodic Hf-Nb Mixed Oxides

2016

In last decades, HfO2 and Nb2O5 have been extensively studied due to their many potential applications, from corrosion protection to CMOS (as high-k gate dielectrics) [1-2] and ReRAM technologies [3-4]. For these technological applications compact, uniform and flat oxides are necessary, and a detailed understanding of their physical properties as a function of the fabrication conditions is needful. Scientific community gradually shifted its interest from pure metal oxides to mixed metal oxides trying to exploit the advantages of pure oxides and to suppress their disadvantages. Mixed oxides can be grown on valve metals alloys by anodizing, a simple and low cost electrochemical process for pr…

Settore ING-IND/23 - Chimica Fisica ApplicataSolid State Properties Anodizing Hf-Nb Mixed Oxides MOS based devices ReRAM technologies
researchProduct

Anodic TiO2 in ReRAM: Influence of Si-doping on the Resistive Switching Properties of Titanium Oxide

2016

TiO2 has attracted much attention due to its potential widespread applications, including capacitors, photocatalysis, solar energy conversion and, more recently, redox-based random access memories (ReRAM). For micro and nano-electronics applications, TiO2 is usually grown through Chemical and Physical Vapour Deposition techniques, such as Atomic Layer Deposition (ALD), Pulsed Laser Deposition (PLD), Sputtering and so on. In ReRAM field, the control of oxide structure (crystallinity, defects concentration etc.) and the choice of electrodes are crucial to have resistive switching phenomena inside the oxide. Thus, anodizing can be proposed as a simple and low cost way to grow TiO2 and to tune …

Settore ING-IND/23 - Chimica Fisica ApplicataAnodizing TiO2 ReRAM Si-doping Resistive Switching ReRAMSettore ING-INF/01 - Elettronica
researchProduct

Valence change ReRAMs (VCM) - Experiments and modelling: General discussion

2019

Valence change ReRAMs (VCM) - Experiments and modelling: General discussion

PhysicsValence (chemistry)Settore ING-IND/23 - Chimica Fisica ApplicataCondensed matter physicsUT-Hybrid-DValence change ReRAMs (VCM) Experiments modellingPhysical and Theoretical Chemistry22/4 OA procedure
researchProduct

Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: general discussion

2019

Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: General discussion

Settore ING-IND/23 - Chimica Fisica ApplicataMaterials scienceElectrochemical metallization ReRAMs Experiments modellingNanotechnologyOtaNanoPhysical and Theoretical ChemistryElectrochemistry22/4 OA procedure
researchProduct